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RFP40N10-VB Datasheet
Datasheet specifications
| Datasheet's name | RFP40N10-VB |
|---|---|
| File size | 65.022 KB |
| File type | |
| Number of pages | 7 |
Download Datasheet RFP40N10-VB |
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Technical specifications
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: VBsemi Elec RFP40N10-VB
- Operating Temperature: -55°C~+175°C@(Tj)
- Power Dissipation (Pd): 127W
- Total Gate Charge (Qg@Vgs): 35nC@10V
- Drain Source Voltage (Vdss): 100V
- Input Capacitance (Ciss@Vds): 2.4nF@25V
- Continuous Drain Current (Id): 45A
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 90pF@25V
- Drain Source On Resistance (RDS(on)@Vgs,Id): 32mΩ@10V,5A
- Package: TO-220AB-3
- Manufacturer: VBsemi Elec